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Defects and diffusi...
Defects and diffusion in high purity silicon for detector applications
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Svensson, B. G. (författare)
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Monakhov, E. V. (författare)
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Alfieri, G. (författare)
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Mikelsen, M. (författare)
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Avset, B. S. (författare)
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- Hallén, Anders (författare)
- KTH,Mikroelektronik och informationsteknik, IMIT,Solid State Electronics
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(creator_code:org_t)
- 2004-07-30
- 2004
- Engelska.
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Ingår i: Conference on Photo-Responsive Materials, Proceedings. - : Wiley-VCH Verlagsgesellschaft. - 3527405526 ; , s. 2250-2257
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- In this contribution we review some recent results on defects occurring after irradiation and thermal treatment of silicon detectors for ionizing radiation. In particular, the annealing of the prominent divacancy centre and the concurrent growth of a new double acceptor centre, assigned to the divacancy-oxygen pair, is treated in detail. The detectors were fabricated using oxygenated high purity float zone (FZ) silicon wafers of n-type in order to improve the radiation hardness. The results obtained have important implication on our current understanding of the degradation of silicon detectors at high radiation fluences and suggest that a new concept for optimised impurity/defect engineering needs to be developed.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Materialteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Materials Engineering (hsv//eng)
Nyckelord
- Annealing
- Crystal defects
- Degradation
- Diffusion
- Heat treatment
- Ionizing radiation
- Irradiation
- Leakage currents
- Oxygen
- Radiation detectors
- Radiation hardening
- Conduction band edges
- Float zone (FZ) silicon
- Oxygenation
- Silicon detectors
- Silicon wafers
Publikations- och innehållstyp
- ref (ämneskategori)
- kon (ämneskategori)
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