Sökning: onr:"swepub:oai:DiVA.org:kth-16056" >
Ion implantation da...
Ion implantation damage annealing in 4H-SiC monitored by scanning spreading resistance microscopy
-
Suchodolskis, A. (författare)
-
- Hallén, Anders. (författare)
- KTH,Mikroelektronik och Informationsteknik, IMIT
-
- Linnarsson, Margareta K (författare)
- KTH,Mikroelektronik och tillämpad fysik, MAP
-
visa fler...
-
- Österman, John (författare)
- KTH,Mikroelektronik och Informationsteknik, IMIT
-
- Karlsson, Ulf O. (författare)
- KTH,Mikroelektronik och Informationsteknik, IMIT
-
visa färre...
-
(creator_code:org_t)
- Elsevier BV, 2006
- 2006
- Engelska.
-
Ingår i: Thin Solid Films. - : Elsevier BV. - 0040-6090 .- 1879-2731. ; 515:2, s. 611-614
- Relaterad länk:
-
https://urn.kb.se/re...
-
visa fler...
-
https://doi.org/10.1...
-
visa färre...
Abstract
Ämnesord
Stäng
- To obtain a better understanding of the damage annealing process and dopant defect incorporation and activation we have implanted epitaxially grown 4H-SiC layers with high doses of Al+ ions. Cross-sections of the samples are investigated by scanning spreading resistance microscopy (SSRM) using a commercial atomic force microscopy (AFM). The defects caused by the implanted ions compensate for the doping and decrease the charge carrier mobility. This causes the resistivity to increase in the as-implanted regions. The calculated profile of implanted ions is in good agreement with the measured ones and shows a skewed Gaussian shape. Implanted samples are annealed up to 400 degrees C. Despite these low annealing temperatures we observe a clear improvement of the sample conductivity in the asimplanted region.
Nyckelord
- silicon carbide
- SiC
- ion implantation
- SSRM
- acceptor doping
- carriers
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
Hitta via bibliotek
Till lärosätets databas