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Combined photolumin...
Combined photoluminescence-imaging and deep-level transient spectroscopy of recombination processes at stacking faults in 4H-SiC
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Galeckas, A. (författare)
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- Hallén, Anders. (författare)
- KTH,Mikroelektronik och tillämpad fysik, MAP
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Majdi, S. (författare)
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- Linnros, Jan (författare)
- KTH,Mikroelektronik och tillämpad fysik, MAP
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Pirouz, P. (författare)
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(creator_code:org_t)
- 2006
- 2006
- Engelska.
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 74:23
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- We report on electronic properties of single- and double-layer stacking faults in 4H-SiC and provide an insight into apparent distinctions of recombination-enhanced defect reactions at these faults. Photoluminescence imaging spectroscopy and deep-level transient spectroscopy experiments reveal key constituents of radiative recombination and also provide firm evidence of nonradiative centers at E-V+0.38 eV responsible for recombination-enhanced mobility of silicon-core partial dislocations. A comprehensive energy level model is proposed allowing for a qualitative description of recombination activity at different types of stacking faults and the corresponding bounding partial dislocations.
Nyckelord
- silicon
- diodes
- semiconductors
- dislocations
- crystals
- mobility
- devices
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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