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Crystalline quality...
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Intarasiri, S.Institute for Science and Technology Research and Development, Chiang Mai University
(författare)
Crystalline quality of 3C-SiC formed by high-fluence C+-implanted Si
- Artikel/kapitelEngelska2007
Förlag, utgivningsår, omfång ...
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Elsevier BV,2007
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printrdacarrier
Nummerbeteckningar
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LIBRIS-ID:oai:DiVA.org:kth-16531
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https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-16531URI
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https://doi.org/10.1016/j.apsusc.2006.10.055DOI
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https://urn.kb.se/resolve?urn=urn:nbn:se:miun:diva-3943URI
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https://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-10998URI
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Språk:engelska
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Sammanfattning på:engelska
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Klassifikation
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Ämneskategori:ref swepub-contenttype
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Ämneskategori:art swepub-publicationtype
Anmärkningar
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QC 20100525
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VR-Materials Science
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Carbon ions at 40 keV were implanted into (1 0 0) high-purity p-type silicon wafers at 400 degrees C to a fluence of 6.5 x 10(17) ions/cm(2). Subsequent thermal annealing of the implanted samples was performed in a diffusion furnace at atmospheric pressure with inert nitrogen ambient at 1100 degrees C. Time-of-flight energy elastic recoil detection analysis (ToF-E ERDA) was used to investigate depth distributions of the implanted ions. Infrared transmittance (IR) and Raman scattering measurements were used to characterize the formation of SiC in the implanted Si substrate. X-ray diffraction analysis (XRD) was used to characterize the crystalline quality in the surface layer of the sample. The formation of 3C-SiC and its crystalline structure obtained from the above mentioned techniques was finally confirmed by transmission electron microscopy (TEM). The results show that 3C-SiC is directly formed during implantation, and that the subsequent high-temperature annealing enhances the quality of the polycrystalline SiC.
Ämnesord och genrebeteckningar
Biuppslag (personer, institutioner, konferenser, titlar ...)
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Hallén, Anders.Uppsala universitet,KTH,Mikroelektronik och Informationsteknik, IMIT,Jonfysik(Swepub:uu)anhal173
(författare)
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Lu, JunUppsala universitet,Jonfysik(Swepub:uu)jlu23482
(författare)
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Jensen, JensUppsala universitet,Jonfysik(Swepub:uu)jejen103
(författare)
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Yu, L. D.
(författare)
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Bertilsson, KentMittuniversitetet,Institutionen för informationsteknologi och medier (-2013)(Swepub:miun)kenber
(författare)
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Wolborski, M.KTH
(författare)
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Singkarat, S.FNRF, Department of Physics, Faculty of Science, Chiang Mai University
(författare)
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Possnert, GöranUppsala universitet,Jonfysik(Swepub:uu)gpo27116
(författare)
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Institute for Science and Technology Research and Development, Chiang Mai UniversityMikroelektronik och Informationsteknik, IMIT
(creator_code:org_t)
Sammanhörande titlar
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Ingår i:Applied Surface Science: Elsevier BV253:11, s. 4836-48420169-43321873-5584
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