Sökning: onr:"swepub:oai:DiVA.org:kth-167955" >
Temperature depende...
Temperature dependencies of free-carrier-absorption lifetime in fluorescent 6H-SiC layers
-
- Manolis, G. (författare)
- Institute of Applied Research, Vilnius University, Lithuania
-
- Gulbinas, K. (författare)
- Institute of Applied Research, Vilnius University, Lithuania
-
- Grivickas, V. (författare)
- Institute of Applied Research, Vilnius University, Lithuania
-
visa fler...
-
- Jokubavicius, Valdas (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
-
- Linnarsson, Margareta (författare)
- KTH,Integrerade komponenter och kretsar,Royal Institute of Technology, Kista, Sweden
-
- Syväjärvi, Mikael (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
-
visa färre...
-
(creator_code:org_t)
- Institute of Physics Publishing (IOPP), 2014
- 2014
- Engelska.
-
Ingår i: IOP Conference Series. - : Institute of Physics Publishing (IOPP). ; 56:1, s. 012006-
- Relaterad länk:
-
https://doi.org/10.1...
-
visa fler...
-
http://iopscience.io...
-
https://urn.kb.se/re...
-
https://doi.org/10.1...
-
https://urn.kb.se/re...
-
visa färre...
Abstract
Ämnesord
Stäng
- The nonradiative decay of majority electrons has been studied over a wide temperature range from 80 K to 600 K using the time-resolved free-carrier-absorption (FCA) technique. At high injection level of the highly-luminescent N-B codoped 6H-SiC epilayer, we revealed three main relaxation components of injected free electrons over ps-to-ms time ranges. By means of temperature dependency, two components can be ascribed to thermal activation of holes from a shallow (200 meV) and a deep (500 meV) acceptor. The third one, which has a hundred us-time scale, we attribute to minority hole recombination from the valance band into the electron trap (53 meV). This recombination channel seems to compete with the deep-acceptor (Boron) to-donor (Nitrogen) pair visible emission at and below 300 K.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Nyckelord
- Energy gap
- Light emission
- Semiconductor junctions
- Solar cells
- High injection
- Hole recombination
- Nonradiative decays
- Recombination channels
- Temperature dependencies
- Thermal activation
- Visible emissions
- Wide temperature ranges
- Silicon carbide
Publikations- och innehållstyp
- ref (ämneskategori)
- kon (ämneskategori)
Hitta via bibliotek
Till lärosätets databas