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Optimal Emitter Cel...
Optimal Emitter Cell Geometry in High Power 4H-SiC BJTs
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- Salemi, Arash (författare)
- KTH,Integrerade komponenter och kretsar
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- Elahipanah, Hossein (författare)
- KTH,Integrerade komponenter och kretsar
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- Zetterling, Carl-Mikael (författare)
- KTH,Integrerade komponenter och kretsar
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- Östling, Mikael (författare)
- KTH,Integrerade komponenter och kretsar
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(creator_code:org_t)
- Institute of Electrical and Electronics Engineers (IEEE), 2015
- 2015
- Engelska.
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Ingår i: IEEE Electron Device Letters. - : Institute of Electrical and Electronics Engineers (IEEE). - 0741-3106 .- 1558-0563. ; 36:10, s. 1069-1072
- Relaterad länk:
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https://kth.diva-por... (primary) (Raw object)
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- Three 4H-SiC bipolar junction transistor designs with different emitter cell geometries (linear interdigitated fingers, square cell geometry, and hexagon cell geometry) are fabricated, analyzed, and compared with respect to current gain, ON-resistance (R-ON), current density (J(C)), and temperature performance for the first time. Emitter size effect and surface recombination are investigated. Due to a better utilization of the base area, optimal emitter cell geometry significantly increases the current density about 42% and reduces the ON-resistance about 21% at a given current gain, thus making the device more efficient for high-power and high-temperature applications.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Nyckelord
- Power 4H-SiC BJTs
- current density
- current gain
- ON-resistance
- surface recombination
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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