Conductivity modulated on-axis 4H-SiC 10+ kV PiN diodes

• Degradation-free ultrahigh-voltage (>10 kV) PiN diodes using on-axis 4H-SiC with low forward voltage drop (VF = 3.3 V at 100 A/cm2) and low differential on-resistance (RON = 3.4 m.cm2) are fabricated, measured, and analyzed by device simulation. The devices show stable on-state characteristics over a broad temperature range up to 300 °C. They show no breakdown up to 10 kV, i.e., the highest blocking capability for 4H-SiC devices using on-axis to date. The minority carrier lifetime (τP) is measured after epitaxial growth by time resolved photoluminescence (TRPL) technique at room temperature. The τP is measured again after device fabrication by open circuit voltage decay (OCVD) up to 500 K.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

NATURVETENSKAP  -- Kemi (hsv//swe)

NATURAL SCIENCES  -- Chemical Sciences (hsv//eng)

Nyckelord

bipolar degradation-free

breakdown voltage

lifetime enhancement

OCVD

On-axis 4H-SiC

on-resistance

PiN diode

ultrahigh-voltage

VF

Carrier lifetime

Diodes

Electric breakdown

Open circuit voltage

Power electronics

Semiconductor diodes

Semiconductor junctions

Semiconductor quantum wells

Silicon carbide

Bipolar degradations

On-axis

Ultra high voltage

Semiconductor devices

Publikations- och innehållstyp

ref (ämneskategori)

kon (ämneskategori)