Sökning: onr:"swepub:oai:DiVA.org:kth-18317" > Strained Si/SiGe MO...
Fältnamn | Indikatorer | Metadata |
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000 | 03569naa a2200661 4500 | |
001 | oai:DiVA.org:kth-18317 | |
003 | SwePub | |
008 | 100805s2009 | |||||||||||000 ||eng| | |
024 | 7 | a https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-183172 URI |
024 | 7 | a https://doi.org/10.1016/j.mee.2008.08.0012 DOI |
040 | a (SwePub)kth | |
041 | a engb eng | |
042 | 9 SwePub | |
072 | 7 | a ref2 swepub-contenttype |
072 | 7 | a art2 swepub-publicationtype |
100 | 1 | a Olsen, S. H.4 aut |
245 | 1 0 | a Strained Si/SiGe MOS technology :b Improving gate dielectric integrity |
264 | 1 | b Elsevier BV,c 2009 |
338 | a print2 rdacarrier | |
500 | a QC 20100525 4th IEEE International Symposium on Advanced Gate Stack Technology (ISAGST), Dallas, TX, 2007 | |
520 | a Strained Si is recognised as a necessary technology booster for the nanoelectronics regime. This work shows that high levels of stress attainable from globally strained Si/SiGe platforms can benefit gate leakage and reliability in addition to MOSFET channel mobility. Device self-heating due to the low thermal conductivity of SiGe is shown to be the dominating factor behind compromised performance against short channel strained Si/SiGe MOSFETs. Novel thin virtual substrates aimed at reducing self-heating effects are investigated. In addition to reducing self-heating effects, the thin Virtual substrates provide further improvements to gate oxide integrity, reliability and lifetime compared with conventional thick virtual substrates. This is attributed to tire lower surface roughness of the thin virtual substrates which arises due to the reduced interactions of strain-relieving misfit dislocations during thin Virtual substrate growth. Good agreement between experimental data and physical models is demonstrated, enabling gate leakage mechanisms to be identified. The advantages and challenges of using globally strained Si/SiGe to advance MOS technology are discussed. | |
650 | 7 | a TEKNIK OCH TEKNOLOGIERx Elektroteknik och elektronik0 (SwePub)2022 hsv//swe |
650 | 7 | a ENGINEERING AND TECHNOLOGYx Electrical Engineering, Electronic Engineering, Information Engineering0 (SwePub)2022 hsv//eng |
653 | a Si | |
653 | a SiGe | |
653 | a MOSFET | |
653 | a Mobility enhancement | |
653 | a Gate leakage | |
653 | a Dielectric | |
653 | a reliability | |
653 | a Lifetime | |
653 | a Virtual substrate | |
653 | a n-mosfets | |
653 | a electrical-properties | |
653 | a si | |
653 | a ge | |
653 | a diffusion | |
653 | a si1-xgex | |
653 | a buffers | |
653 | a alloys | |
653 | a layers | |
653 | a films | |
653 | a Electrical engineering, electronics and photonics | |
653 | a Elektroteknik, elektronik och fotonik | |
700 | 1 | a Yana, L.4 aut |
700 | 1 | a Agaiby, R.4 aut |
700 | 1 | a Escobedo-Cousin, E.4 aut |
700 | 1 | a O'Neill, A. G.4 aut |
700 | 1 | a Hellström, Per-Eriku KTH,Integrerade komponenter och kretsar4 aut0 (Swepub:kth)u1wc1lgb |
700 | 1 | a Östling, Mikaelu KTH,Integrerade komponenter och kretsar4 aut0 (Swepub:kth)u1u0kle4 |
700 | 1 | a Lyutovich, K.4 aut |
700 | 1 | a Kasper, E.4 aut |
700 | 1 | a Claeys, C.4 aut |
700 | 1 | a Parker, E. H. C.4 aut |
710 | 2 | a KTHb Integrerade komponenter och kretsar4 org |
773 | 0 | t Microelectronic Engineeringd : Elsevier BVg 86:3, s. 218-223q 86:3<218-223x 0167-9317x 1873-5568 |
856 | 4 8 | u https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-18317 |
856 | 4 8 | u https://doi.org/10.1016/j.mee.2008.08.001 |
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