Bias-temperature instability in single-layer graphene field-effect transistors : A reliability challenge

• We present a detailed analysis of the bias-temperature instability (BTI) of single-layer graphene field-effect transistors (GFETs). We demonstrate that the dynamics can be systematically studied when the degradation is expressed in terms of a Dirac point voltage shift. Under these prerequisites it is possible to understand and benchmark both NBTI and PBTI using models previously developed for Si technologies. In particular, we show that the capture/emission time (CET) map approach can be also applied to GFETs and that recovery in GFETs follows the same universal relaxation trend as their Si counterparts. While the measured defect densities can still be considerably larger than those known from Si technology, the dynamics of BTI are in general comparable, allowing for quantitative benchmarking of the graphene/dielectric interface quality.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

Benchmarking

Graphene

Graphene transistors

Integrated circuits

Nanoelectronics

Silicon

Bias temperature instability

Dirac point voltages

Graphene field effect transistor (GFETs)

Graphene field-effect transistors

Interface quality

MAP approach

Si technology

Single layer

Field effect transistors

Publikations- och innehållstyp

ref (ämneskategori)

kon (ämneskategori)