Morphology of tantalum nitride thin films grown on fused quartz by reactive high power impulse magnetron sputtering (HiPIMS)

• Thin tantalum nitride films were grown on fused quartz by reactive high power impulse magnetron sputtering (HiPIMS) while varying the fractional N2 flow rate at fixed substrate temperature of 400°C. The film properties were compared to films grown by conventional dc magnetron sputtering (dcMS) at similar conditions. Structural characterization was carried out using X-ray diffraction and reflection methods. The HiPIMS process produces slightly less dense films than does dcMS and the surface roughness is similar for both the HiPIMS and dcMS grown films. The deposition rate for HiPIMS is up to 80 % lower than for dcMS but it can be roughly doubled by lowering the magnetic field strength by 30 %.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Materialteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Materials Engineering (hsv//eng)

Nyckelord

Characterization

Deposition rates

Magnetron sputtering

Nitrides

Quartz

Sputtering

Surface roughness

Tantalum

X ray diffraction

Conventional dc magnetron sputtering

Film properties

High power impulse magnetron sputtering (HIPIMS)

Magnetic field strengths

Structural characterization

Substrate temperature

Tantalum nitrides

Tantalum-nitride film

Thin films

Publikations- och innehållstyp

ref (ämneskategori)

kon (ämneskategori)