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Structural and elec...
Structural and electrical characteristics of oxygen-implanted 6H-SiC
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Wang, L. W. (författare)
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Huang, J. P. (författare)
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Duo, X. Z. (författare)
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Song, Z. T. (författare)
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Lin, C. L. (författare)
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- Zetterling, Carl-Mikael (författare)
- KTH,Mikroelektronik och informationsteknik, IMIT
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- Östling, Mikael (författare)
- KTH,Mikroelektronik och informationsteknik, IMIT
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(creator_code:org_t)
- 2000
- 2000
- Engelska.
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Ingår i: Nuclear Instruments and Methods in Physics Research Section B. - 0168-583X .- 1872-9584. ; 169, s. 1-5
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- Silicon carbide is an important wide band gap semiconductor for high-temperature, high-voltage, high-power and high-frequency devices. Ion implantation is an important aspect for both fundamental research and device applications. In this report, oxygen ions, 70 keV with dose ranging from 5 x 10(13) to 5 x 10(15) cm(-2), have been implanted into n-type BH-SIC. The damage behavior and internal stress were checked by Rutherford backscattering spectroscopy and channeling and X-rays rocking curve, respectively. Atomic force microscope observations revealed that the surface morphology is quite sensitive to the implantation even at a dose of 1 x 10(14)/cm(-2). After annealing in nitrogen at 1200 degrees C, no remarkable damage recovery could be seen if the deposit damage energy is above the critical value. Schottky structures of Au/SiC have been fabricated and I-V curves of metal/SiC/InGeNi were measured at room temperature at both forward and reverse bias, electrical isolation effect was observed at proper implantation dose. The results indicated that there exists a dose window for electrical isolations. X-ray photoelectron spectroscopy (XPS) confirmed the formation of silicon oxide and CO due to oxygen implantation. In case of high-dose ion implantation, graphite phase was detected.
Nyckelord
- enhanced thermal-oxidation
- silicon-carbide
- ion-implantation
- amorphization
- layers
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