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Growth of quaternar...
Growth of quaternary InP-based materials by LP-MOVPE using TBA and TBP in N-2 ambient
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Keiper, D. (författare)
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Westphalen, R. (författare)
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- Landgren, Gunnar (författare)
- KTH,Mikroelektronik och informationsteknik, IMIT
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(creator_code:org_t)
- Springer Science and Business Media LLC, 2000
- 2000
- Engelska.
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Ingår i: Journal of Electronic Materials. - : Springer Science and Business Media LLC. - 0361-5235 .- 1543-186X. ; 29:12, s. 1398-1401
- Relaterad länk:
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https://urn.kb.se/re...
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visa fler...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- We have investigated the growth of quaternary In1-xGaxAsyP1-y/InP materials using TEA and TBP in a N-2 ambient. This process improves significantly the uniformity of In1-xGaxAs/InP QWs whereas it does not improve the quaternary Q(1.3)/InP uniformity compared to the conventional process utilizing AsH3 and PH3 in H-2. The effect on the x and y uniformity for different combinations of the group-V precursors TBA, TBP, PH3, and AsH3 with the carrier gases H-2 and N-2 is evaluated. Advantages with the TBA/TBP/N-2 process are discussed.
Nyckelord
- TBA
- TBP
- alternative V-sources
- OMVPE
- MOCVD
- nitrogen
- vapor-phase epitaxy
- large-area
- atmosphere
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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