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Vacancy-related def...
Vacancy-related defects in ion-beam and electron irradiated 6H-SiC
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Bratus, V. Y. (författare)
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Petrenko, T. T. (författare)
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von Bardeleben, H. J. (författare)
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Kalinina, E. V. (författare)
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- Hallén, Anders. (författare)
- KTH,Mikroelektronik och informationsteknik, IMIT
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(creator_code:org_t)
- 2001
- 2001
- Engelska.
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Ingår i: Applied Surface Science. - 0169-4332 .- 1873-5584. ; 184:04-jan, s. 229-236
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- A brief review is given on EPR study of irradiation-induced defects in SiC. The results of low-temperature study of Ky1 and Ky2 centers reveal for both of them the C-S symmetry, spin S = 1/2 and close coincidence of the g-tensor components. For Ky2 defect the principal values of g-tensor have been determined as g(z) = 2.0048, g(x) = 2.0022 and g(y) = 2.0037, where z and x directions reside in the (11 (2) over bar0) plane and the z-axis makes up an angle 65 degrees with the c-axis. The same residence of z- and x-axis and an angle 59 degrees are found for Ky1 center, g(z) = 2.0058, g(x) = 2.0025 and g(y) = 2.0023. A comparison of experimental and calculated hyperfine (HF) parameters is presented which suggests that Ky2 and Ky1 defects can be assigned to the positively charged carbon vacancy in 6H-SiC. The EPR study of defects created along the Al+ ion track in n-type 6H-SiC shows that lineshape, linewidth and integral intensity of the EPR signal reflect the state of damaged layer generated by ion implantation. A variation of defect density with annealing is reported and defect origin is discussed.
Nyckelord
- EPR
- SiC
- intrinsic defects
- carbon vacancy
- ion implantation
- electron irradiation
- radiation-induced defects
- 6h silicon-carbide
- spin-resonance
- magnetic-resonance
- sic polytypes
- implantation
- energy
- damage
- positron
- centers
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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