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Electrical activati...
Electrical activation of high concentrations of N+ and P+ ions implanted into 4H-SiC
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Laube, M. (författare)
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Schmid, F. (författare)
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Pensl, G. (författare)
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Wagner, G. (författare)
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- Linnarsson, Margareta K. (författare)
- KTH,Mikroelektronik och informationsteknik, IMIT
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Maier, M. (författare)
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(creator_code:org_t)
- AIP Publishing, 2002
- 2002
- Engelska.
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 92:1, s. 549-554
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- Comparative Hall effect investigations are conducted on N- and P-implanted as well as on (N+P)-coimplanted 4H-SiC epilayers. Box profiles with three different mean concentrations ranging from 2.5x10(18) to 3x10(20) cm(-3) to a depth of 0.8 mum are implanted at 500 degreesC into the (0001)-face of the initially p-type (Al-doped) epilayers. Postimplantation anneals at 1700 degreesC for 30 min are conducted to electrically activate the implanted N+ and P+ ions. Our systematic Hall effect investigations demonstrate that there is a critical donor concentration of (2-5)x10(19) cm(-3). Below this value, N- and P-donors result in comparable sheet resistances. The critical concentration represents an upper limit for electrically active N donors, while P donors can be activated at concentrations above 10(20) cm(-3). This high concentration of electrically active P donors is responsible for the observed low sheet resistance of 35 Omega/square, which is about one order of magnitude lower than the minimum sheet resistance achieved by N implantation.
Nyckelord
- phosphorus implantation
- 4h-silicon carbide
- growth
- donors
- endor
- epr
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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