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Ferroelectric Pb(Zr...
Ferroelectric Pb(Zr,Ti)O-3/Al2O3/4H-SiC diode structures
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Koo, S. M. (författare)
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- Khartsev, Sergiy (författare)
- KTH,Mikroelektronik och informationsteknik, IMIT
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- Zetterling, Carl-Mikael (författare)
- KTH,Mikroelektronik och informationsteknik, IMIT
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- Grishin, Alexander M. (författare)
- KTH,Mikroelektronik och informationsteknik, IMIT
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- Östling, Mikael (författare)
- KTH,Mikroelektronik och informationsteknik, IMIT
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(creator_code:org_t)
- AIP Publishing, 2002
- 2002
- Engelska.
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 81:5, s. 895-897
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- Pb(Zr,Ti)O-3 (PZT) films (450 nm thick) were grown on 4H-silicon carbide (SiC) substrates by a pulsed-laser deposition technique. X-ray diffraction confirms single PZT phase without a preferred orientation. Stable capacitance-voltage (C-V) loops with low conductance (<0.1 mS/cm(2), tan deltasimilar to0.0007 at 400 kHz) and memory window as wide as 10 V were obtained when 5-nm-thick Al2O3 was used as a high band gap (E(g)similar to9 eV) barrier buffer layer between PZT (E(g)similar to3.5 eV) and SiC (E(g)similar to3.2 eV). High-frequency (400 kHz) C-V characteristics revealed clear accumulation, and depletion behavior. Although the charge injection from SiC is the dominant mechanism for C-V hysteresis in PZT/Al2O3/SiC, negligible sweep rate dependence and negligible applied bias dependence were observed compared to that of PZT/SiC. By using room-temperature photoilluminated C-V measurements, the interface states as well as the charge trapping in the PZT/Al2O3 stacks have been calculated.
Nyckelord
- electrical characteristics
- band offsets
- memory
- transistor
- silicon
- growth
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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