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A wide-band RF fron...
A wide-band RF front-end for multiband multistandard high-linearity low-IF wireless receivers
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- Ismail, Mohammed (författare)
- KTH,Mikroelektronik och informationsteknik, IMIT
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- Olsson, Håkan (författare)
- KTH,Mikroelektronik och informationsteknik, IMIT
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(creator_code:org_t)
- 2002
- 2002
- Engelska.
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Ingår i: IEEE Journal of Solid-State Circuits. - 0018-9200 .- 1558-173X. ; 37:9, s. 1162-1168
- Relaterad länk:
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https://urn.kb.se/re...
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visa fler...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- A wide-band radio-frequency (RF) front-end is designed with a balanced combined low-noise amplifier and a switching mixer (a low-noise converter) in RF Si-bipolar process with an f(T) of 25 GHz. The circuit achieves 20-dB conversion gain, higher than -4.5-dBm RF-to-IF IIP3 (+15.5-dBm OIP3) and less than 3.8-dB double-side-band noise figure in 900-MHz (e.g., GSM) and 1.9-GHz (e.g., WCDMA) frequency bands. The -1-dB compression point is -20 dBm at 13-mA dc current consumption from a single 5-V supply. The local-oscillator leakage to the input is less than -56 dBm in the 900-MHz band and less than -63 dBm in the 1.9-GHz band. The -3-dB bandwidth of the amplifier is larger than 3 GHz and a wide-band matching at the input with - 10 to -41-dB S-11 is achieved in the frequency bands of interest by applying a dual-loop wide-band active feedback. The die area is 0.69 x 0.9 mm(2). The circuit is suitable for area-efficient multiband multistandard low-IF receivers.
Nyckelord
- dual-loop feedback
- linearity
- low-noise amplifier
- low-IF architecture
- mixer
- noise figure
- RF front-end
- wireless receiver
- cmos receiver
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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