Sökning: onr:"swepub:oai:DiVA.org:kth-21876" >
Increased nucleatio...
Increased nucleation temperature of NiSi2 in the reaction of Ni thin films with Si1-xGex
-
- Seger, Johan (författare)
- KTH,Mikroelektronik och informationsteknik, IMIT
-
- Zhang, Shi-Li (författare)
- KTH,Mikroelektronik och informationsteknik, IMIT
-
Mangelinck, D. (författare)
-
visa fler...
-
- Radamson, Henry H. (författare)
- KTH,Mikroelektronik och informationsteknik, IMIT
-
visa färre...
-
(creator_code:org_t)
- AIP Publishing, 2002
- 2002
- Engelska.
-
Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 81:11, s. 1978-1980
- Relaterad länk:
-
https://urn.kb.se/re...
-
visa fler...
-
https://doi.org/10.1...
-
visa färre...
Abstract
Ämnesord
Stäng
- The formation of a ternary solid solution NiSi1-xGex, instead of a mixture of NiSi and NiGe, is found during solid-state interactions between Ni and various Si1-xGex films ranging from pure Si to pure Ge. The lattice parameters of the solid solution of orthorhombic structure increase linearly with Ge content (x) as: a=5.24+0.19x Angstrom, b=3.25+0.16x Angstrom, and c=5.68+0.15x Angstrom. The specific resistivity increases from 17 muOmega cm for NiSi to 21 muOmega cm for NiSi0.71Ge0.29 and NiSi0.42Ge0.58. Although the Ge content rapidly drops from 30-60 to about 10 at. % in the solid solutions formed above 600 degreesC, the crystallographic structure remains unchanged and no NiSi2 [or Ni(Si,Ge)(2)] is found in the Si1-xGex samples even after annealing at 850 degreesC. Without Ge, the NiSi completely disappears at 750 degreesC. These results indicate a strong effect of the entropy of mixing in NiSi-NiGe on the nucleation of NiSi2.
Ämnesord
- NATURVETENSKAP -- Fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences (hsv//eng)
Nyckelord
- stability
- silicon
- silicides
- alloy
- cosi2
- phase
- Physics
- Fysik
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
Hitta via bibliotek
Till lärosätets databas