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Sökning: onr:"swepub:oai:DiVA.org:kth-222439" > Fragility of the Di...

Fragility of the Dirac Cone Splitting in Topological Crystalline Insulator Heterostructures

Polley, Craig M. (författare)
Lund University,Lunds universitet,MAX IV-laboratoriet,MAX IV Laboratory
Buczko, Ryszard (författare)
Institute of Physics of the Polish Academy of Sciences
Forsman, Alexander (författare)
KTH Royal Institute of Technology
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Dziawa, Piotr (författare)
Institute of Physics of the Polish Academy of Sciences
Szczerbakow, Andrzej (författare)
Institute of Physics of the Polish Academy of Sciences
Rechcinski, Rafal (författare)
Institute of Physics of the Polish Academy of Sciences
Kowalski, Bogdan J. (författare)
Institute of Physics of the Polish Academy of Sciences
Story, Tomasz (författare)
Institute of Physics of the Polish Academy of Sciences
Trzyna, Malgorzata (författare)
University of Rzeszów
Bianchi, Marco (författare)
Aarhus University
Cabo, Antonija Grubisic (författare)
Aarhus University
Hofmann, Philip (författare)
KTH,Material- och nanofysik,Aarhus University
Tjernberg, Oscar, 1967- (författare)
KTH Royal Institute of Technology,KTH,Materialfysik, MF
Balasubramanian, Thiagarajan (författare)
Lund University,Lunds universitet,MAX IV-laboratoriet,MAX IV Laboratory
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 (creator_code:org_t)
2017-12-18
2018
Engelska.
Ingår i: ACS Nano. - : AMER CHEMICAL SOC. - 1936-0851 .- 1936-086X. ; 12:1, s. 617-626
  • Tidskriftsartikel (refereegranskat)
Abstract Ämnesord
Stäng  
  • The "double Dirac cone" 2D topological interface states found on the (001) faces of topological crystalline insulators such as Pb1-xSnxSe feature degeneracies located away from time reversal invariant momenta and are a manifestation of both mirror symmetry protection and valley interactions. Similar shifted degeneracies in 1D interface states have been highlighted as a potential basis for a topological transistor, but realizing such a device will require a detailed understanding of the intervalley physics involved. In addition, the operation of this or similar devices outside of ultrahigh vacuum will require encapsulation, and the consequences of this for the topological interface state must be understood. Here we address both topics for the case of 2D surface states using angle-resolved photoemission spectroscopy. We examine bulk Pb1-xSnxSe(001) crystals overgrown with PbSe, realizing trivial/topological heterostructures. We demonstrate that the valley interaction that splits the two Dirac cones at each (X) over bar is extremely sensitive to atomic-scale details of the surface, exhibiting non-monotonic changes as PbSe deposition proceeds. This includes an apparent total collapse of the splitting for sub-monolayer coverage, eliminating the Lifshitz transition. For a large overlayer thickness we observe quantized PbSe states, possibly reflecting a symmetry confinement mechanism at the buried topological interface.

Ämnesord

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
TEKNIK OCH TEKNOLOGIER  -- Nanoteknik -- Nanoteknik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Nano-technology -- Nano-technology (hsv//eng)

Nyckelord

angle-resolved photoemission spectroscopy (ARPES)
topological crystalline insulator
topological heterostructure
valley splitting
quantum confinement
angle-resolved photoemission spectroscopy (ARPES)
quantum confinement
topological crystalline insulator
topological heterostructure
valley splitting

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