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Investigation of th...
Investigation of thermal properties in fabricated 4H-SiC high power bipolar transistors
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- Danielson, E. (författare)
- KTH, Dept. Microelectron./Info. Technol., P.O. Box Electrum 229, S-164 40 Kista, Sweden
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- Zetterling, Carl-Mikael (författare)
- KTH,Mikroelektronik och informationsteknik, IMIT,KTH, Dept. Microelectron./Info. Technol., P.O. Box Electrum 229, S-164 40 Kista, Sweden
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- Domeij, Martin (författare)
- KTH,Mikroelektronik och informationsteknik, IMIT,KTH, Dept. Microelectron./Info. Technol., P.O. Box Electrum 229, S-164 40 Kista, Sweden
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- Östling, Mikael (författare)
- KTH,Mikroelektronik och informationsteknik, IMIT,Östling, M., KTH, Dept. Microelectron./Info. Technol., P.O. Box Electrum 229, S-164 40 Kista, Sweden
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- Forsberg, Urban (författare)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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- Janzén, Erik (författare)
- Linköpings universitet,Tekniska högskolan,Halvledarmaterial
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KTH, Dept Microelectron./Info. Technol., P.O. Box Electrum 229, S-164 40 Kista, Sweden Mikroelektronik och informationsteknik, IMIT (creator_code:org_t)
- 2003
- 2003
- Engelska.
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Ingår i: Solid-State Electronics. - 0038-1101 .- 1879-2405. ; 47:4, s. 639-644
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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https://urn.kb.se/re...
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Abstract
Ämnesord
Stäng
- Silicon carbide bipolar junction transistors have been fabricated and investigated. The transistors had a maximum current gain of approximately 10 times, and a breakdown voltage of 450 V. When operated at high power densities the device showed a clear self-heating effect, decreasing the current gain. The junction temperature was extracted during self-heating to approximately 150 degreesC, using the assumption that the current gain only depends on temperature. Thermal images of a device under operation were also recorded using an infrared camera, showing a significant temperature increase in the vicinity of the device. The device was also tested in a switched setup, showing fast turn on and turn off at 1 MHz and 300 V supply voltage. Device simulations have been used to analyze the measured data. The thermal conductivity is fitted against the self-heating, and the lifetime in the base is fitted against the measurement of the current gain.
Nyckelord
- bipolar transistor
- thermal conductivity
- breakdown voltage
- junction transistors
- silicon-carbide
- devices
- TECHNOLOGY
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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