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Identification of h...
Identification of hydrogen related defects in proton implanted float-zone silicon
- Artikel/kapitelEngelska2003
Förlag, utgivningsår, omfång ...
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2002-11-29
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EDP Sciences,2003
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printrdacarrier
Nummerbeteckningar
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LIBRIS-ID:oai:DiVA.org:kth-22635
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https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-22635URI
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https://doi.org/10.1051/epjap:2002113DOI
Kompletterande språkuppgifter
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Språk:engelska
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Sammanfattning på:engelska
Ingår i deldatabas
Klassifikation
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Ämneskategori:ref swepub-contenttype
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Ämneskategori:art swepub-publicationtype
Anmärkningar
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QC 20100525
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Hydrogen related defects in high purity n-type float zone silicon samples have been studied by means of Deep Level Transient Spectroscopy. They were introduced, as well as the characteristic vacancy-oxygen (VO) and divacancy (V-2) centers, by MeV proton implantation. Two hydrogen related defect levels were resolved at 0.32 eV and 0.45 eV below the conduction band edge (E-c). Careful annealing studies indicate strongly that a third hydrogen related level, overlapping with the singly negative charge state level of V-2, is also present in the implanted samples. The annealing behavior of the hydrogen related defects has been compared with literature data leading to a rather firm identification. The E-c-0.32 eV level originates from a VO center partly saturated with hydrogen (a VOH complex) while the E-c-0.45 eV level may be ascribed to a complex involving a monovacancy and a hydrogen atom ( a VH complex). The third hydrogen related defect is tentatively ascribed to a complex involving a hydrogen atom and a divacancy ( a V2H complex).
Ämnesord och genrebeteckningar
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level transient spectroscopy
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si-a center
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irradiated silicon
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electron traps
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divacancy
Biuppslag (personer, institutioner, konferenser, titlar ...)
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Hallén, Anders.KTH,Mikroelektronik och informationsteknik, IMIT(Swepub:kth)u11ywmz1
(författare)
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Svensson, B. G.
(författare)
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Wong-Leung, J.
(författare)
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Jagadish, C.
(författare)
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Privitera, V.
(författare)
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KTHMikroelektronik och informationsteknik, IMIT
(creator_code:org_t)
Sammanhörande titlar
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Ingår i:European Physical Journal: EDP Sciences23:1, s. 5-91286-00421286-0050
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