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Combination of JFET...
Combination of JFET and MOSFET devices in 4H-SiC for high-temperature stable circuit operation
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Koo, S. M. (författare)
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- Zetterling, Carl-Mikael (författare)
- KTH,Mikroelektronik och informationsteknik, IMIT
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Lee, H. S. (författare)
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visa fler...
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- Östling, Mikael (författare)
- KTH,Mikroelektronik och informationsteknik, IMIT
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visa färre...
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(creator_code:org_t)
- Institution of Engineering and Technology (IET), 2003
- 2003
- Engelska.
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Ingår i: Electronics Letters. - : Institution of Engineering and Technology (IET). - 0013-5194 .- 1350-911X. ; 39:12, s. 933-935
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- A novel combination of junction-gated and metal-oxide-semiconductor field effect transistor (JMOSFET) has been fabricated and characterised in 4H-SiC. The high-temperature stable operation of JMOSFETs has been explored in terms of constant current levels. The JMOSFETs have shown the feasibility for operating with constant on and off current levels from room temperature up to 300degreesC. Another advantage of this device is the improved current density by accumulation of the MOS n-channel.
Nyckelord
- field-effect transistors
Publikations- och innehållstyp
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- art (ämneskategori)
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