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Atomically Thin Mes...
Atomically Thin Mesoporous In2O3-x/In2S3 Lateral Heterostructures Enabling Robust Broadband-Light Photo-Electrochemical Water Splitting
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- Hou, Jungang (författare)
- DUT, DUT KTH Joint Educ & Res Ctr Mol Devices, Inst Artificial Photosynth, State Key Lab Fine Chem, Dalian 116024, Peoples R China.
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- Cao, Shuyan (författare)
- DUT, DUT KTH Joint Educ & Res Ctr Mol Devices, Inst Artificial Photosynth, State Key Lab Fine Chem, Dalian 116024, Peoples R China.
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- Sun, Yiqing (författare)
- DUT, DUT KTH Joint Educ & Res Ctr Mol Devices, Inst Artificial Photosynth, State Key Lab Fine Chem, Dalian 116024, Peoples R China.
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- Wu, Yunzhen (författare)
- DUT, DUT KTH Joint Educ & Res Ctr Mol Devices, Inst Artificial Photosynth, State Key Lab Fine Chem, Dalian 116024, Peoples R China.
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- Liang, Fei (författare)
- Chinese Acad Sci, Tech Inst Phys & Chem, Beijing 100190, Peoples R China.
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- Lin, Zheshuai (författare)
- Chinese Acad Sci, Tech Inst Phys & Chem, Beijing 100190, Peoples R China.
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- Sun, Licheng, 1962- (författare)
- KTH,Kemi
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DUT, DUT KTH Joint Educ & Res Ctr Mol Devices, Inst Artificial Photosynth, State Key Lab Fine Chem, Dalian 116024, Peoples R China Chinese Acad Sci, Tech Inst Phys & Chem, Beijing 100190, Peoples R China. (creator_code:org_t)
- 2017-12-18
- 2018
- Engelska.
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Ingår i: Advanced Energy Materials. - : Wiley-VCH Verlagsgesellschaft. - 1614-6832 .- 1614-6840. ; 8:9
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- Atomically thin 2D heterostructures have opened new realms in electronic and optoelectronic devices. Herein, 2D lateral heterostructures of mesoporous In2O3-x/In2S3 atomic layers are synthesized through the in situ oxidation of In2S3 atomic layers by an oxygen plasma-induced strategy. Based on experimental observations and theoretical calculations, the prolonged charge carrier lifetime and increased electron density reveal the efficient photoexcited carrier transport and separation in the In2O3-x/In2S3 layers by interfacial bonding at the atomic level. As expected, the synergistic structural and electronic modulations of the In2O3-x/In2S3 layers generate a photocurrent of 1.28 mA cm(-2) at 1.23 V versus a reversible hydrogen electrode, nearly 21 and 79 times higher than those of the In2S3 atomic layers and bulk counterpart, respectively. Due to the large surface area, abundant active sites, broadband-light harvesting ability, and effective charge transport pathways, the In2O3-x/In2S3 layers build efficient pathways for photoexcited charge in the 2D semiconductive channels, expediting charge transport and kinetic processes and enhancing the robust broadband-light photo-electrochemical water splitting performance. This work paves new avenues for the exploration and design of atomically thin 2D lateral heterostructures toward robust photo-electrochemical applications and solar energy utilization.
Ämnesord
- NATURVETENSKAP -- Kemi (hsv//swe)
- NATURAL SCIENCES -- Chemical Sciences (hsv//eng)
Nyckelord
- atomically thin layers
- charge separation
- In2O3-x/In2S3
- lateral heterostructures
- photo-electrochemical water splitting
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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