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Diffusion of phosph...
Diffusion of phosphorus in relaxed Si1-xGex films and strained Si/Si1-xGex heterostructures
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Christensen, JS (författare)
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- Radamson, Henry H. (författare)
- KTH,Mikroelektronik och informationsteknik, IMIT
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Kuznetsov, AY (författare)
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Svensson, BG (författare)
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(creator_code:org_t)
- AIP Publishing, 2003
- 2003
- Engelska.
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 94:10, s. 6533-6540
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- Phosphorus diffusion has been studied in relaxed Si1-xGex samples (x=0.11 and 0.19) and strained Si/Si1-xGex/Si heterostructures (x=0.08, 0.13, and 0.18). The diffusivity of P is found to increase with increasing Ge content, while the influence of compressive strain results in a decrease in diffusivity as compared to that in relaxed material. The effect of strain is found to be equivalent to an apparent activation energy of -13 eV per unit strain, where the negative sign indicates that the P diffusion is mediated by interstitials in Si1-xGex (x<0.20). This conclusion is also supported by an experiment utilizing injection of Si self-interstitials, which results in an enhanced P diffusion in strained Si1-xGex. Further, P is found to segregate into Si across Si/Si1-xGex interfaces and the segregation coefficient increases with increasing Ge concentration.
Nyckelord
- boron-diffusion
- epitaxial layers
- silicon
- segregation
- si
- sb
- mechanisms
- defects
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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