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Time-resolved analy...
Time-resolved analysis of the white photoluminescence from SiO2 films after Si and C coimplantation
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Pellegrino, P. (författare)
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Perez-Rodriguez, A. (författare)
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Garrido, B. (författare)
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Gonzalez-Varona, O. (författare)
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Morante, J. R. (författare)
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- Marcinkevicius, Saulius (författare)
- KTH,Mikroelektronik och informationsteknik, IMIT
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- Galeckas, Augustinas (författare)
- KTH,Mikroelektronik och informationsteknik, IMIT
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- Linnros, Jan (författare)
- KTH,Mikroelektronik och informationsteknik, IMIT
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(creator_code:org_t)
- AIP Publishing, 2004
- 2004
- Engelska.
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 84:1, s. 25-27
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- The analysis of the white photoluminescence (PL) from Si+ and C+ coimplanted SiO2 is reported as a function of the implanted dose. By both steady and time-resolved measurements, the presence of several components in the emission between 2 and 3.3 eV has been resolved. The decays of the PL transients are characterized by short lifetimes, below 2 ns. For the emission at 2.1-2.3 eV, photoluminescence decay transients have been measured, obtaining a fast relaxation component of about 50-70 ps, followed by a slower component of the order of 1 ns. These values contrast with the very slow behavior, characteristic for the light emission from Si nanocrystals, and make carbon-related emitting centers interesting for optoelectronic applications where fast switching behavior is important.
Ämnesord
- NATURVETENSKAP -- Fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences (hsv//eng)
Nyckelord
- silicon nanocrystals
- thermal sio2-films
- porous silicon
- luminescence
- emission
- layers
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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