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As- or P-doped Si l...
As- or P-doped Si layers grown by RPCVD for emitter application in SiGeCHBTs
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- Suvar, Erdal (författare)
- KTH,Mikroelektronik och informationsteknik, IMIT
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- Haralson, Erik (författare)
- KTH,Mikroelektronik och informationsteknik, IMIT
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- Hållstedt, Julius (författare)
- KTH,Mikroelektronik och informationsteknik, IMIT
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- Radamson, Henry H. (författare)
- KTH,Mikroelektronik och informationsteknik, IMIT
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- Östling, Mikael (författare)
- KTH,Mikroelektronik och informationsteknik, IMIT
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(creator_code:org_t)
- 2004
- 2004
- Engelska.
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Ingår i: Physica Scripta. - 0031-8949 .- 1402-4896. ; T114, s. 34-36
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- A new module for the emitter formation in a bipolar transistor is presented. Arsenic- or phosphorus-doped polycrystalline silicon layer for the emitter formation is deposited in a reduced pressure chemical vapor deposition reactor using silane as the silicon source gas. Characteristics such as the carrier concentration, conductivity, surface morphology, and thermal stability of the polycrystalline-silicon layer as well as the influence this layer has on a SiGeC transistor structure during the drive-in step area studied. The active carrier concentration of the as-grown sample is strongly dependent on the deposition temperature, especially arsenic doped layers which exhibit more than one order of magnitude difference. However, the carrier concentration for the As- or P-doped layer were comparable to that of a standard in-situ doped poly-crystalline layer after a dopant activation at 925 degrees C for 10s.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Nyckelord
- chemical-vapor-deposition
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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