Sökning: onr:"swepub:oai:DiVA.org:kth-232795" >
Characterizing 3D F...
Characterizing 3D Floating Gate NAND Flash : Observations, Analyses, and Implications
-
- Xiong, Qin (författare)
- Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, 1037 Luoyu Rd, Wuhan 430074, Hubei, Peoples R China.
-
- Wu, Fei (författare)
- Huazhong Univ Sci & Technol, Minist Educ China, Wuhan Natl Lab Optoelect, 1037 Luoyu Rd, Wuhan 430074, Hubei, Peoples R China.;Huazhong Univ Sci & Technol, Minist Educ China, Key Lab Data Storage Syst, 1037 Luoyu Rd, Wuhan 430074, Hubei, Peoples R China.
-
- Lu, Zhonghai (författare)
- KTH,Skolan för informations- och kommunikationsteknik (ICT)
-
visa fler...
-
- Zhu, Yue (författare)
- Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, 1037 Luoyu Rd, Wuhan 430074, Hubei, Peoples R China.
-
- Zhou, You (författare)
- Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, 1037 Luoyu Rd, Wuhan 430074, Hubei, Peoples R China.
-
- Chu, Yibing (författare)
- Renice Technol Co Ltd, 15 Keyuan Rd, Shenzhen 518057, Peoples R China.
-
- Xie, Changsheng (författare)
- Huazhong Univ Sci & Technol, Minist Educ China, Wuhan Natl Lab Optoelect, 1037 Luoyu Rd, Wuhan 430074, Hubei, Peoples R China.;Huazhong Univ Sci & Technol, Minist Educ China, Key Lab Data Storage Syst, 1037 Luoyu Rd, Wuhan 430074, Hubei, Peoples R China.
-
- Huang, Ping (författare)
- Temple Univ, Dept Comp Informat Sci, 1925 N 12th St, Philadelphia, PA 19122 USA.
-
visa färre...
-
Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, 1037 Luoyu Rd, Wuhan 430074, Hubei, Peoples R China Huazhong Univ Sci & Technol, Minist Educ China, Wuhan Natl Lab Optoelect, 1037 Luoyu Rd, Wuhan 430074, Hubei, Peoples R China.;Huazhong Univ Sci & Technol, Minist Educ China, Key Lab Data Storage Syst, 1037 Luoyu Rd, Wuhan 430074, Hubei, Peoples R China. (creator_code:org_t)
- 2018-04-12
- 2018
- Engelska.
-
Ingår i: ACM Transactions on Storage. - : Association for Computing Machinery (ACM). - 1553-3077 .- 1553-3093. ; 14:2
- Relaterad länk:
-
https://urn.kb.se/re...
-
visa fler...
-
https://doi.org/10.1...
-
visa färre...
Abstract
Ämnesord
Stäng
- As both NAND flash memory manufacturers and users are turning their attentions from planar architecture towards three-dimensional (3D) architecture, it becomes critical and urgent to understand the characteristics of 3D NAND flash memory. These characteristics, especially those different from planar NAND flash, can significantly affect design choices of flash management techniques. In this article, we present a characterization study on the state-of-the-art 3D floating gate (FG) NAND flash memory through comprehensive experiments on an FPGA-based 3D NAND flash evaluation platform. We make distinct observations on its performance and reliability, such as operation latencies and various error patterns, followed by careful analyses from physical and circuit-level perspectives. Although 3D FG NAND flash provides much higher storage densities than planar NAND flash, it faces new performance challenges of garbage collection overhead and program performance variations and more complicated reliability issues due to, e.g., distinct location dependence and value dependence of errors. We also summarize the differences between 3D FG NAND flash and planar NAND flash and discuss implications on the designs of NAND flash management techniques brought by the architecture innovation. We believe that our work will facilitate developing novel 3D FG NAND flash-oriented designs to achieve better performance and reliability.
Ämnesord
- NATURVETENSKAP -- Data- och informationsvetenskap -- Datavetenskap (hsv//swe)
- NATURAL SCIENCES -- Computer and Information Sciences -- Computer Sciences (hsv//eng)
Nyckelord
- 3D floating gate NAND flash
- MLC
- error pattern
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
Hitta via bibliotek
Till lärosätets databas