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A wide-range operat...
A wide-range operating synaptic device based on organic ferroelectricity with low energy consumption
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- Tu, Li (författare)
- Fudan Univ, SIST, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China.
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- Yuan, Sijian (författare)
- Fudan Univ, SIST, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China.
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- Xu, Jiawei (författare)
- Fudan Univ, SIST, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China.
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- Yang, Kunlong (författare)
- KTH,Skolan för elektroteknik och datavetenskap (EECS),Royal Inst Technol, Sch Technol & Hlth, SE-10044 Stockholm, Sweden.
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- Wang, Pengfei (författare)
- Fudan Univ, SIST, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China.
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- Cui, Xiaolei (författare)
- Fudan Univ, SIST, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China.
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- Zhang, Xin (författare)
- Nanjing Tech Univ, Key Lab Flexible Elect, Nanjing 211800, Jiangsu, Peoples R China.;Nanjing Tech Univ, Inst Adv Mat, Nanjing 211800, Jiangsu, Peoples R China.
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- Wang, Jiao (författare)
- Fudan Univ, SIST, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China.
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- Zhan, Yi-Qiang (författare)
- Fudan Univ, SIST, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China.
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- Zheng, Li-Rong (författare)
- Fudan Univ, SIST, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China.
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Fudan Univ, SIST, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China Skolan för elektroteknik och datavetenskap (EECS) (creator_code:org_t)
- 2018
- 2018
- Engelska.
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Ingår i: RSC Advances. - : Royal Society of Chemistry. - 2046-2069. ; 8:47, s. 26549-26553
- Relaterad länk:
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https://pubs.rsc.org...
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- In thiswork, a wide-range operating synaptic device based on organic ferroelectricity has been demonstrated. The device possesses a simple two-terminal structure by using a ferroelectric phase-separated polymer blend as the active layer and gold/indium tin oxide (ITO) as the top/bottom electrodes, and exhibits a distinctive history-dependent resistive switching behavior at room temperature. And the device with low energy consumption (similar to 50 fJ mu m(-2) per synaptic event) can provide a reliable synaptic function of potentiation, depression and the complex memory behavior simulation of differential responses to diverse stimulations. In addition, using simulations, the accuracy of 32 x 32 pixel image recognition is improved from 76.21% to 85.06% in the classical model Cifar-10 with 1024 levels of the device, which is an important step towards the higher performance goal in image recognition based on memristive neuromorphic networks.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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Till lärosätets databas
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Tu, Li
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Yuan, Sijian
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Xu, Jiawei
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Yang, Kunlong
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Wang, Pengfei
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Cui, Xiaolei
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visa fler...
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Zhang, Xin
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Wang, Jiao
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Zhan, Yi-Qiang
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Zheng, Li-Rong
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visa färre...
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