Sökning: onr:"swepub:oai:DiVA.org:kth-238393" > Low temperature Ni-...
Fältnamn | Indikatorer | Metadata |
---|---|---|
000 | 02387naa a2200409 4500 | |
001 | oai:DiVA.org:kth-238393 | |
003 | SwePub | |
008 | 181108s2018 | |||||||||||000 ||eng| | |
024 | 7 | a https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-2383932 URI |
024 | 7 | a https://doi.org/10.4028/www.scientific.net/MSF.924.3892 DOI |
040 | a (SwePub)kth | |
041 | a engb eng | |
042 | 9 SwePub | |
072 | 7 | a ref2 swepub-contenttype |
072 | 7 | a kon2 swepub-publicationtype |
100 | 1 | a Ekström, Mattiasu KTH,Elektronik4 aut0 (Swepub:kth)u1l6zf9x |
245 | 1 0 | a Low temperature Ni-Al ohmic contacts to p-TYPE 4H-SiC using semi-salicide processing |
264 | 1 | b Trans Tech Publications,c 2018 |
338 | a print2 rdacarrier | |
500 | a QC 20181108 | |
520 | a Most semiconductor devices require low-resistance ohmic contact to p-type doped regions. In this work, we present a semi-salicide process that forms low-resistance contacts (~10-4 Ω cm2) to epitaxially grown p-type (>5×1018 cm-3) 4H-SiC at temperatures as low as 600 °C using rapid thermal processing (RTP). The first step is to self-align the nickel silicide (Ni2Si) at 600 °C. The second step is to deposit aluminium on top of the silicide, pattern it and then perform a second annealing step in the range 500 °C to 700 °C. | |
650 | 7 | a TEKNIK OCH TEKNOLOGIERx Annan teknik0 (SwePub)2112 hsv//swe |
650 | 7 | a ENGINEERING AND TECHNOLOGYx Other Engineering and Technologies0 (SwePub)2112 hsv//eng |
653 | a Ni-Al | |
653 | a P-type ohmic contact | |
653 | a Rapid thermal processing (RTP) | |
653 | a Silicon carbide (4H-SiC) | |
653 | a Transfer length method (TLM) | |
700 | 1 | a Hou, Shuobenu KTH,Elektronik4 aut0 (Swepub:kth)u1nvrr9i |
700 | 1 | a Elahipanah, Hosseinu KTH,Elektronik4 aut0 (Swepub:kth)u1ve1t1u |
700 | 1 | a Salemi, Arashu KTH,Elektronik4 aut0 (Swepub:kth)u14aqahn |
700 | 1 | a Östling, Mikaelu KTH,Elektronik4 aut0 (Swepub:kth)u1u0kle4 |
700 | 1 | a Zetterling, Carl-Mikael,d 1966-u KTH,Elektronik4 aut0 (Swepub:kth)u15o61ns |
710 | 2 | a KTHb Elektronik4 org |
773 | 0 | t International Conference on Silicon Carbide and Related Materials, ICSCRM 2017d : Trans Tech Publicationsg , s. 389-392q <389-392z 9783035711455 |
856 | 4 8 | u https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-238393 |
856 | 4 8 | u https://doi.org/10.4028/www.scientific.net/MSF.924.389 |
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