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Deeply etched SiO2 ...
Deeply etched SiO2 ridge waveguide for sharp bends
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- Dai, Daoxin (författare)
- Centre for Optical and Electromagnetic Research, State Key Laboratory for Modern Optical Instrumentation, Zhejiang University
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- Shi, Yaocheng (författare)
- Centre for Optical and Electromagnetic Research, State Key Laboratory for Modern Optical Instrumentation, Zhejiang University
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(creator_code:org_t)
- 2006
- 2006
- Engelska.
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Ingår i: Journal of Lightwave Technology. - 0733-8724 .- 1558-2213. ; 24:12, s. 5019-5024
- Relaterad länk:
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https://urn.kb.se/re...
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visa fler...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- A deeply etched SiO2 ridge waveguide including the buffer, core, and cladding is presented for realizing sharp bends. The present SiO2 ridge waveguide has a strong confinement at the lateral direction, while it has a weak confinement at the vertical direction. Due to the strong confinement, a sharp bend (with a very small bending radius of about 10 mu m) is obtained for an acceptable bending loss. A detailed analysis of the loss in a bent waveguide is given by using a finite-difference method. In order to reduce the transition loss, a narrow bending section with an optimal lateral offset is used. A low leakage loss is obtained by using wide straight waveguides, and linear tapers are used to connect the wide straight section and narrow bent sections.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Telekommunikation (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Telecommunications (hsv//eng)
Nyckelord
- bending
- deep etching
- ridge waveguide
- silicon oxide
- Photonics
- Fotonik
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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