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Silicon carbide BJT...
Silicon carbide BJT oscillator design using S-parameters
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- Hussain, Muhammad Waqar, 1985- (författare)
- KTH,Integrerade komponenter och kretsar
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- Elahipanah, Hossein (författare)
- KTH,Integrerade komponenter och kretsar
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- Rodriguez, Saul (författare)
- KTH,Integrerade komponenter och kretsar
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visa fler...
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- Malm, B. Gunnar, 1972- (författare)
- KTH,Integrerade komponenter och kretsar
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- Rusu, Ana, 1959- (författare)
- KTH,Integrerade komponenter och kretsar
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visa färre...
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(creator_code:org_t)
- Trans Tech Publications Ltd, 2019
- 2019
- Engelska.
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Ingår i: Silicon Carbide and Related Materials 2018. - : Trans Tech Publications Ltd. ; , s. 674-678
- Relaterad länk:
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https://warwick.ac.u...
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visa fler...
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https://www.scientif...
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https://urn.kb.se/re...
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https://doi.org/10.4...
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Abstract
Ämnesord
Stäng
- Radio frequency (RF) oscillator design typically requires large-signal, high-frequency simulation models for the transistors. The development of such models is generally difficult and time consuming due to a large number of measurements needed for parameter extraction. The situation is further aggravated as the parameter extraction process has to be repeated at multiple temperature points in order to design a wide-temperature range oscillator. To circumvent this modelling effort, an alternative small-signal, S-parameter based design method can be employed directly without going into complex parameter extraction and model fitting process. This method is demonstrated through design and prototyping a 58 MHz, high-temperature (HT) oscillator, based on an in-house 4H-SiC BJT. The BJT at elevated temperature (up to 300 °C) was accessed by on-wafer probing and connected by RF-cables to the rest of circuit passives, which were kept at room temperature (RT).
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Nyckelord
- 4H-SiC BJT
- RF oscillator
- S-parameters
- Bipolar transistors
- Design
- Extraction
- Parameter extraction
- Silicon carbide
- Silicon wafers
- Elevated temperature
- High frequency simulation
- High temperature
- Oscillator design
- Radio frequencies
- SiC BJT
- Wide temperature ranges
- Scattering parameters
Publikations- och innehållstyp
- ref (ämneskategori)
- kon (ämneskategori)