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Comprehensive Chara...
Comprehensive Characterization of the 4H-SiC Planar and Trench Gate MOSFETs From Cryogenic to High Temperature
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- Tian, Kai (författare)
- Xi An Jiao Tong Univ, Sch Microelect, Xian 700049, Shaanxi, Peoples R China.
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- Hallén, Anders (författare)
- KTH,Skolan för elektroteknik och datavetenskap (EECS)
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- Qi, Jinwei (författare)
- Xi An Jiao Tong Univ, Sch Microelect, Xian 700049, Shaanxi, Peoples R China.
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- Nawaz, Muhammad (författare)
- ABB Corp Res, S-72478 Västerås, Sweden.
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- Ma, Shenhui (författare)
- Xi An Jiao Tong Univ, Dept Microelect, Xian 710049, Shaanxi, Peoples R China.;Hong Kong Univ Sci & Technol, Dept Mech & Aerosp Engn, Hong Kong, Peoples R China.
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- Wang, Menghua (författare)
- Xi An Jiao Tong Univ, Sch Microelect, Xian 700049, Shaanxi, Peoples R China.
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- Guo, Shuwen (författare)
- Xi An Jiao Tong Univ, Sch Microelect, Xian 700049, Shaanxi, Peoples R China.
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- Elgammal, Karim, 1986- (författare)
- KTH,Skolan för elektroteknik och datavetenskap (EECS)
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- Li, Ange (författare)
- Xi An Jiao Tong Univ, Sch Microelect, Xian 700049, Shaanxi, Peoples R China.
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- Liu, Weihua (författare)
- Xi An Jiao Tong Univ, Sch Microelect, Xian 700049, Shaanxi, Peoples R China.
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Xi An Jiao Tong Univ, Sch Microelect, Xian 700049, Shaanxi, Peoples R China Skolan för elektroteknik och datavetenskap (EECS) (creator_code:org_t)
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC, 2019
- 2019
- Engelska.
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Ingår i: IEEE Transactions on Electron Devices. - : IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC. - 0018-9383 .- 1557-9646. ; 66:10, s. 4279-4286
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- In this article, the static, dynamic, and short-circuit properties of 1.2-kV commercial 4H-SiC planar and trench gate metal-oxide-semiconductor field-effect transistors (MOSFETs) are compared and analyzed in a wide temperature range from 90 to 493 K. The temperature-dependent specific ON-resistance (Rsp-ON) and threshold voltage (V-th) are analyzed in relation to the density of the interface state. The turn-on rise and turn-off fall times (T-r and T-f) and the corresponding energy loss (E-r and E-f) are extracted from a double-pulse test from cryogenic to high temperature and analyzed. The short-circuit capability of the two structures is studied at low temperature for the first time. The comprehensive comparison and analysis of the planar and trench gate MOSFET versus temperature in this work show the importance to study applications with SiC MOSFETs in a wide temperature range, especially for the cryogenic temperatures.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Nyckelord
- ON-resistance
- planar metal-oxide-semiconductor field-effect transistors (MOSFETs)
- short-circuit capability
- silicon carbide
- switching loss
- switching time
- temperature
- threshold voltage
- Trench MOSFETs
Publikations- och innehållstyp
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- art (ämneskategori)
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- Av författaren/redakt...
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Tian, Kai
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Hallén, Anders
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Qi, Jinwei
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Nawaz, Muhammad
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Ma, Shenhui
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Wang, Menghua
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visa fler...
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Guo, Shuwen
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Elgammal, Karim, ...
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Li, Ange
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Liu, Weihua
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visa färre...
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