Ultraviolet light sensitive In-doped ZnO thin film field effect transistor printed by inkjet technique

• This indium-doped zinc oxide field effect transistor (IZO-FET) with a large ultraviolet (UV) detection sensitivity has been fabricated by inkjet printing technique. In darkness, the IZO-FETs exhibit a saturation current level of about 10 mu A, an incremental mobility as high as 8 cm(2) V-1 s(-1), and a current on/off ratio of 10(4)-10(5). When illuminated by 363 nm, 1.7 mW cm(-2) UV light, the IZO-FET displays a photocurrent of 2 mA, and a darkness current of similar to 20 nA at an optimized gate voltage of -2 V. The device is effectively turned on in about 5 ms and off in 10 ms. These results suggest that the IZO-FET fabricated by inkjet printing could be a low cost highly sensitive UV photodetector.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Materialteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Materials Engineering (hsv//eng)

Nyckelord

field effect transistors

In doping

inkjet printing

UV photodetectors

ZnO

Materials science

Teknisk materialvetenskap

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