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Epitaxial lateral o...
Epitaxial lateral overgrowth of GaAsP/Si for tandem solar cell
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- Strömberg, Axel (författare)
- KTH,Tillämpad fysik
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- Manavaimaran, Balaji (författare)
- KTH,Tillämpad fysik
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- Srinivasan, Lakshman (författare)
- KTH,Tillämpad fysik
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- Lourdudoss, Sebastian, 1953- (författare)
- KTH,Tillämpad fysik
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- Sun, Yan-Ting (författare)
- KTH,Tillämpad fysik
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(creator_code:org_t)
- Institute of Electrical and Electronics Engineers (IEEE), 2022
- 2022
- Engelska.
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Ingår i: 2022 Compound Semiconductor Week, CSW 2022. - : Institute of Electrical and Electronics Engineers (IEEE).
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- High crystal quality GaAsP/Si fabricated by cost effective heteroepitaxial technology is promising to realize low-cost Si based tandem solar cell with efficiency higher than 30%. In this work, epitaxial lateral overgrowth (ELOG) of GaAsP/GaAs and GaAsP/GaAs/Si by hydride vapor phase epitaxy (HVPE) and their properties are studied by photoluminescence (PL) mapping. High crystal quality ELOG GaAsP/Si is obtained with enhanced PL intensity and narrow line width indicating reduced defect density provided by ELOG approach.
Ämnesord
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Nyckelord
- epitaxial lateral overgrowth
- GaAsP/Si
- hydride vapor phase epitaxy
Publikations- och innehållstyp
- ref (ämneskategori)
- kon (ämneskategori)