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Electrochemical per...
Electrochemical performance of gold-decorated graphene electrodes integrated with SiC
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- Shtepliuk, Ivan (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
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- Jian, Jing Xin (författare)
- Department of Chemistry, Shantou University, 515063 Guangdong, P. R. China, Guangdong,Shantou Univ, Peoples R China
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- Pliatsikas, Nikolaos (författare)
- Department of Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki, Greece,Aristotle Univ Thessaloniki, Greece
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- Schilirò, Emanuela (författare)
- CNR-IMM, Strada VIII, 5, 95121 Catania, Italy, Strada VIII, 5
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- Iakimov, Tihomir (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
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- Yazdi, Gholamreza (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
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- Ivanov, Ivan Gueorguiev (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
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- Giannazzo, Filippo (författare)
- CNR-IMM, Strada VIII, 5, 95121 Catania, Italy, Strada VIII, 5
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- Sarakinos, Kostas (författare)
- KTH,Kärnenergiteknik,Department of Physics, University of Helsinki, P.O. Box 43, FI-00014 Helsinki, Finland, P.O. Box 43,Univ Helsinki, Finland; KTH Royal Inst Technol, Sweden
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- Yakimova, Rositsa (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska fakulteten
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(creator_code:org_t)
- Elsevier BV, 2023
- 2023
- Engelska.
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Ingår i: Microelectronic Engineering. - : Elsevier BV. - 0167-9317 .- 1873-5568. ; 278
- Relaterad länk:
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https://doi.org/10.1...
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https://liu.diva-por... (primary) (Raw object)
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https://urn.kb.se/re...
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https://doi.org/10.1...
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https://urn.kb.se/re...
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Abstract
Ämnesord
Stäng
- Here we investigate the interface properties of gold (Au) decorated graphenized surfaces of 4H-SiC intended for electrochemical electrodes. These are fabricated using a two-step process: discontinuous Au layers with a nominal thickness of 2 nm are sputter-deposited onto 4H-SiC substrates with different graphenization extent—zero-layer graphene (ZLG) and monolayer epitaxial graphene) —followed by thermal annealing. By performing combined morphometric analysis, Raman mapping analysis, conductive atomic force microscopy, and electrochemical impedance spectroscopy measurements, we shed light on the relationship between physical processes (Au intercalation, particle re-shaping, and de-wetting) caused by thermal annealing and the intrinsic properties of graphenized SiC (vertical electron transport, charge-transfer properties, vibrational properties, and catalytic activity). We find that the impedance spectra of all considered structures exhibit two semicircles in the high and low frequency regions, which may be attributed to the graphene/ZLG/SiC (or Au/graphene/ZLG/SiC) and SiC/ZLG/graphene/electrolyte (or SiC/ZLG//Au/electrolyte) interfaces, respectively. An equivalent circuit model is proposed to estimate the interface carrier transfer parameters. This work provides an in-depth comprehension of the way by which the Au/2D carbon/SiC interaction strength influences the interface properties of heterostructures, which can be helpful for developing high performance catalytic and sensing devices.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Nyckelord
- 4H-SiC electrode
- Annealing
- Gold nanostructures
- Graphene
- Impedance spectroscopy
- Raman
- Zero-layer graphene
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Shtepliuk, Ivan
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Jian, Jing Xin
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Pliatsikas, Niko ...
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Schilirò, Emanue ...
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Iakimov, Tihomir
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Yazdi, Gholamrez ...
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Ivanov, Ivan Gue ...
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Giannazzo, Filip ...
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Sarakinos, Kosta ...
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Yakimova, Rosits ...
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- Om ämnet
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- TEKNIK OCH TEKNOLOGIER
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TEKNIK OCH TEKNO ...
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och Elektroteknik oc ...
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och Annan elektrotek ...
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- NATURVETENSKAP
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NATURVETENSKAP
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och Fysik
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och Den kondenserade ...
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Microelectronic ...
- Av lärosätet
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Kungliga Tekniska Högskolan
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Linköpings universitet