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Integrated 4-termin...
Integrated 4-terminal single-contact nanoelectromechanical relays implemented in a silicon-on-insulator foundry process
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- Li, Yingying, 1994- (författare)
- KTH,Mikro- och nanosystemteknik,MST
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- Worsey, Elliot (författare)
- University of Bristol, BS8 1UB Bristol, UK
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- Bleiker, Simon J. (författare)
- KTH,Mikro- och nanosystemteknik
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- Edinger, Pierre (författare)
- KTH,Mikro- och nanosystemteknik
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- Kulsreshath, Mukesh (författare)
- University of Bristol, BS8 1UB Bristol, UK
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- Tang, Qi (författare)
- University of Bristol, BS8 1UB Bristol, UK
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- Takabayashi, Alain (författare)
- École Polytechnique Fédérale de Lausanne (EPFL), 1015 Lausanne, Switzerland
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- Quack, Niels (författare)
- École Polytechnique Fédérale de Lausanne (EPFL), 1015 Lausanne, Switzerland
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- Verheyen, Peter (författare)
- IMEC, 3001 Leuven, Belgium
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- Bogaerts, Wim (författare)
- IMEC, 3001 Leuven, Belgium; Ghent University, 9052 Gent, Belgium
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- Gylfason, Kristinn, 1978- (författare)
- KTH,Mikro- och nanosystemteknik
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- Pamunuwa, Dinesh (författare)
- University of Bristol, BS8 1UB Bristol, UK
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- Niklaus, Frank, 1971- (författare)
- KTH,Mikro- och nanosystemteknik
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(creator_code:org_t)
- Royal Society of Chemistry, 2023
- 2023
- Engelska.
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Ingår i: Nanoscale. - : Royal Society of Chemistry. - 2040-3364 .- 2040-3372.
- Relaterad länk:
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https://doi.org/10.1...
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https://kth.diva-por... (primary) (Raw object)
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- Integrated nanoelectromechanical (NEM) relays can be used instead of transistors to implement ultra-low power logic circuits, due to their abrupt turn-off characteristics and zero off-state leakage. Further, realizing circuits with 4-terminal (4-T) NEM relays enables significant reduction in circuit device count compared to conventional transistor circuits. For practical 4-T NEM circuits, however, the relays need to be miniaturized and integrated with high-density back-end-of-line (BEOL) interconnects, which is challenging and has not been realized to date. Here, we present electrostatically actuated silicon 4-T NEM relays that are integrated with multi-layer BEOL metal interconnects, implemented using a commercial silicon-on-insulator (SOI) foundry process. We demonstrate 4-T switching and the use of body-biasing to reduce pull-in voltage of a relay with a 300 nm airgap, from 15.8 V to 7.8 V, consistent with predictions of the finite-element model. Our 4-T NEM relay technology enables new possibilities for realizing NEM-based circuits for applications demanding harsh environment computation and zero standby power, in industries such as automotive, Internet-of-Things, and aerospace.
Nyckelord
- Electrical Engineering
- Elektro- och systemteknik
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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Till lärosätets databas
- Av författaren/redakt...
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Li, Yingying, 19 ...
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Worsey, Elliot
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Bleiker, Simon J ...
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Edinger, Pierre
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Kulsreshath, Muk ...
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Tang, Qi
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visa fler...
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Takabayashi, Ala ...
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Quack, Niels
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Verheyen, Peter
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Bogaerts, Wim
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Gylfason, Kristi ...
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Pamunuwa, Dinesh
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Niklaus, Frank, ...
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visa färre...
- Artiklar i publikationen
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Nanoscale
- Av lärosätet
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Kungliga Tekniska Högskolan