In-diffusion, trapping and out-diffusion of deuterium in 4H-SiC substrates

• Incorporation of hydrogen/deuterium in n-, p-type, and semi-insulating 4H-SiC substrates during epitaxial growth at 1590 degrees C has been studied in detail by secondary ion mass spectrometry. Out-diffusion has been investigated in samples subsequently annealed at high temperatures. After the epitaxial growth, deuterium is detected throughout the entire substrates. Out-diffusion can be observed after anneals at 1300 degrees C, but traces of deuterium can still be found in samples annealed as high as 1700 degrees C. A trap limited diffusion mechanism is proposed with vacancy related hydrogen trapping centers in n-type and semi insulating 4H-SiC substrates.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Materialteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Materials Engineering (hsv//eng)

Nyckelord

deuterium

SIMS

diffusion

Publikations- och innehållstyp

ref (ämneskategori)

kon (ämneskategori)