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High current gain s...
High current gain silicon carbide bipolar power transistors
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- Domeij, Martin (författare)
- KTH,Mikroelektronik och tillämpad fysik, MAP
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- Lee, Hyung-Seok (författare)
- KTH,Mikroelektronik och tillämpad fysik, MAP
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- Zetterling, Carl-Mikael (författare)
- KTH,Mikroelektronik och tillämpad fysik, MAP
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visa fler...
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- Östling, Mikael (författare)
- KTH,Mikroelektronik och tillämpad fysik, MAP
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Schöner, Adolf (författare)
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visa färre...
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(creator_code:org_t)
- 2006
- 2006
- Engelska.
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Ingår i: Proceedings of the 18th International Symposium on Power Semiconductor Devices and ICs. ; , s. 141-144
- Relaterad länk:
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https://urn.kb.se/re...
Abstract
Ämnesord
Stäng
- Silicon carbide NPN bipolar junction transistors were fabricated and a current gain exceeding 60 was obtained for a BJT with a breakdown voltage BV(CEO)=1100 V. A reduction of the current gain was observed after contact annealing at 950 degrees C and this was attributed to degradation of the oxide passivation. Device simulations with varying emitter doping resulted in a maximum current gain for an emitter doping around 1(.)10(19) cm(-3). Resistive turn-off measurements were performed and a minimum collector-emitter voltage (V(CE)) rise-time of 40 ns was found. The VCE rise-time showed a clear dependence on the on-state base current thus indicating a significant stored charge.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Nyckelord
- sificon carbide
- bipolar junction transistor
- current gain
- surface recombination
- bandgap narrowing
Publikations- och innehållstyp
- ref (ämneskategori)
- kon (ämneskategori)