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Nanoscale TiN metal...
Nanoscale TiN metal gate technology for CMOS integration
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- Lemme, Max C., 1970- (författare)
- AMO GmbH, AMICA, Aachen, Germany
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Efavi, J. K. (författare)
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Mollenhauer, T. (författare)
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Schmidt, M. (författare)
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Gottlob, H. D. B. (författare)
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Wahlbrink, T. (författare)
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Kurz, H. (författare)
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(creator_code:org_t)
- Elsevier BV, 2006
- 2006
- Engelska.
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Ingår i: Microelectronic Engineering. - : Elsevier BV. - 0167-9317 .- 1873-5568. ; 83:4-9, s. 1551-1554
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- A TiN metal gate technology including essential natiostructuring process steps is investigated. Complex interdependencies of material deposition, nanolithography, nanoscale etching and post fabrication annealing are taken into account. First, a reactive sputter process has been optimized for plasma damage and stoichiometry. Then, a two step etch process that yields both anisotropy and selectivity has been identified. Finally, MOS-capacitors with TiN/SiO2 gate stacks fabricated with this technology have been exposed to rapid thermal annealing steps. TiN/SiO2 interfaces are chemically stable up to 800 degrees C and yield excellent CV and IV characteristics.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Nanoteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Nano-technology (hsv//eng)
Nyckelord
- nanoelectronics
- metal gate
- RIE etching
- nanostructuring
- TiN
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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