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Leakage current mec...
Leakage current mechanisms in epitaxial Gd(2)O(3) high-k gate dielectrics
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Gottlob, H. D. B. (författare)
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Echtermeyer, T. J. (författare)
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Schmidt, M. (författare)
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Mollenhauer, T. (författare)
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Wahlbrink, T. (författare)
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- Lemme, Max C., 1970- (författare)
- AMO GmbH, AMICA, Aachen, Germany
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Kurz, H. (författare)
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(creator_code:org_t)
- The Electrochemical Society, 2008
- 2008
- Engelska.
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Ingår i: Electrochemical and solid-state letters. - : The Electrochemical Society. - 1099-0062 .- 1944-8775. ; 11:3, s. G12-G14
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- We report on leakage current mechanisms in epitaxial gadolinium oxide (Gd(2)O(3)) high-k gate dielectrics suitable for low standby power logic applications. The investigated p-type metal-oxide-semi con doctor capacitors are gated with complementary-metal-oxide-semiconductor-compatible fully silicided nickel silicide electrodes. The Gd(2)O(3) thickness is 5.9 nm corresponding to a capacitance equivalent oxide thickness of 1.8 nm. Poole-Frenkel conduction is identified as the main leakage mechanism with the high-frequency permittivity describing the dielectric response on the carriers. A trap level of Phi(T) = 1.2 eV is extracted. The resulting band diagram strongly suggests hole conduction to be dominant over electron conduction.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Nanoteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Nano-technology (hsv//eng)
Nyckelord
- Electrochemical electrodes; Epitaxial layers; Gadolinium compounds; Leakage currents; MOS devices; Silicides
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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