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Investigation of hi...
Investigation of high-K gate stacks with epitaxial Gd(2)O(3) and FUSINiSi metal gates down to CET=0.86 nm
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Gottlob, H. D. B. (författare)
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Echtermeyer, T. (författare)
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Mollenhauer, T. (författare)
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Efavi, J. K. (författare)
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Schmidt, M. (författare)
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Wahlbrink, T. (författare)
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- Lemme, Max C., 1970- (författare)
- AMO GmbH, AMICA, Aachen, Germany
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Kurz, H. (författare)
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(creator_code:org_t)
- Elsevier BV, 2006
- 2006
- Engelska.
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Ingår i: Materials Science in Semiconductor Processing. - : Elsevier BV. - 1369-8001 .- 1873-4081. ; 9:6, s. 904-908
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- Novel gate stacks with epitaxial gadoliniurn oxide (Gd(2)O(3)) high-k dielectrics and fully silicided (FUSI) nickel silicide (NiSi) gate electrodes are investigated. Ultra-low leakage current densities down to 10(-7) A cm(-2) are observed at a capacitance equivalent oxide thickness of CET = 1.8 nm. The influence of a titanium nitride (TiN) capping layer during silicidation is studied. Furthermore, films with an ultra-thin CET of 0.86 nm at a Gd(2)O(3) thickness of 3.1 nm yield current densities down to 0.5 A cm(-2) at V(g) = + 1 V. The extracted dielectric constant for these gate stacks ranges from k = 13 to 14. These results emphasize the potential of NiSi/Gd(2)O(3) gate stacks for future material-based scaling of CMOS technology.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Nanoteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Nano-technology (hsv//eng)
Nyckelord
- high-k
- epitaxial dielectric
- Gd(2)O(3)
- metal gate
- fully silicided (FUSI)
- NiSi
- TiN
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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