Extracting the relative dielectric constant for "high-k layers" from CV measurements: Errors and error propagation

Extracting the relative dielectric constant for "high-k layers" from CV measurements : Errors and error propagation

QC 20120306
The paper pursues an investigation of the errors associated with the extraction of the dielectric constant (i.e., kappa value) from capacitance-voltage measurements on metal oxide semiconductor capacitors. The existence of a transition layer between the high-rc dielectric and the silicon substrate is a factor that affects - in general - the assessment of the electrical data, as well as the extraction of rc. A methodology which accounts for this transition layer and the errors related to other parameters involved in the k value extraction is presented; moreover, we apply this methodology to experimental CV results on HfO2/SiOx/Si structures produced in different conditions.

Hall, S. (författare)
Engstrom, O. (författare)
Raeissi, B. (författare)
Lemme, Max C.,1970-AMO GmbH, AMICA, Aachen, Germany(Swepub:kth)u1m2eozy (författare)
Hurley, P. K. (författare)
Cherkaoui, K. (författare)
AMO GmbH, AMICA, Aachen, Germany (creator_code:org_t)

Ingår i:Microelectronics and reliability: Elsevier BV47:4-5, s. 678-6810026-27141872-941X

Av författaren/redakt...: Buiu, O.; Hall, S.; Engstrom, O.; Raeissi, B.; Lemme, Max C., 1 ...; Hurley, P. K.; visa fler...; Cherkaoui, K.; visa färre...

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