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Mobility Extraction...
Mobility Extraction of UTB n-MOSFETs down to 0.9 nm SOI thickness
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Schmidt, M. (författare)
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- Lemme, Max C., 1970- (författare)
- AMO GmbH, AMICA, Aachen, Germany
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Gottlob, H. D. B. (författare)
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Kurz, H. (författare)
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Driussi, F. (författare)
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Selmi, L. (författare)
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(creator_code:org_t)
- NEW YORK : IEEE, 2009
- 2009
- Engelska.
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Ingår i: ULIS 2009. - NEW YORK : IEEE. ; , s. 27-30
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- In this abstract, the impact of series resistance on mobility extraction in conventional and recessed-gate ultra thin body (UTB) n-MOSFETs is investigated. High series resistance leads to an overestimation of the internal source / drain voltage and influences the measurement of the gate to channel capacitance. A specific MOSFET design that includes additional channel contacts and recessed gate technology are used to successfully extract mobility down to 0.9 nm silicon film thickness (4 atomic layers). Quantum mechanical effects are found to shift the threshold voltage and degrade mobility at these extreme scaling limits.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Nanoteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Nano-technology (hsv//eng)
Publikations- och innehållstyp
- ref (ämneskategori)
- kon (ämneskategori)