Low-frequency noise in SiGe channel pMOSFETs on ultra-thin body SOI with Ni-silicided source/drain

• Thelow-frequency noise in buried SiGe channel pMOSFETs fabricated on ultra-thinbody silicon-on-insulator (SOI) substrates is investigated. The total thickness ofthe Si/SiGe/Si body structure, which is fully depleted (FD), is20 nm. The low-frequency noise properties are compared with FDSOI pMOSFETs with a 20 nm Si body. The effectof the Ni-silicide used in the Source/Drain were also studied,especially the case of Schottky-Barrier (SB) MOSFETs when the Ni-silicideis formed at the edges of the channel.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

1/f noise

low-frequency noise

SiGe

silicon-on-insulator (SOI)

fully depleted (FD)

Schottky-Barrier (SB)

MOSFETs

Electronics

Elektronik

Publikations- och innehållstyp

ref (ämneskategori)

kon (ämneskategori)