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Epitaxial growth of...
Epitaxial growth of SiC in a new multi-wafer VPE reactor
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Karlsson, S. (författare)
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- Nordell, Nils (författare)
- Industrial Microelectronic Center (IMC), Sweden
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Spadafora, F. (författare)
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- Linnarsson, Margareta (författare)
- KTH,Solid State Electronics
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(creator_code:org_t)
- 1999
- 1999
- Engelska.
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Ingår i: Materials Science & Engineering. - 0921-5107 .- 1873-4944. ; 61-62, s. 143-146
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- SiC epitaxial layers have been grown in a commercial multi-wafer reactor. Results from the initial growth runs are presented. The reactor is vertical and has a high speed rotating susceptor that can support up to six 50 mm diameter wafers. The surface morphology of the grown layers are specular and show no indication of step-bunching. The unintentional background doping is p-type in the low 10(15) cm(-3) range, consisting mainly of Al. Both N and Al have been used for doped layers showing wide doping range capability and sharp transients. The best uniformity in thickness and doping achieved so far on the same 35 mm wafer are +/- 7% and +/- 10%, respectively. (C) 1999 Elsevier Science S.A. All rights reserved.
Ämnesord
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Nyckelord
- CVD
- multi-wafer reactor
- vapor phase epitaxy
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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