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Incorporation of hy...
Incorporation of hydrogen (H-1 and H-2) into 4H-SiC during epitaxial growth
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- Linnarsson, M K (författare)
- KTH,Skolan för informations- och kommunikationsteknik (ICT)
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Forsberg, U (författare)
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Janson, M S (författare)
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visa fler...
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Janzen, E (författare)
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Svensson, B G (författare)
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visa färre...
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(creator_code:org_t)
- 2002
- 2002
- Engelska.
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Ingår i: SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS. ; , s. 565-568
- Relaterad länk:
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https://urn.kb.se/re...
Abstract
Ämnesord
Stäng
- The hydrogen depth distribution in 4H-SiC after epitaxial growth at 1600 degreesC has been studied in detail with secondary ion mass spectrometry. Both H-1 and H-2 have been employed as carrier gas to trace the origin of the incorporated hydrogen. In particular the substrate as a prospective hydrogen source has been considered. After growth H-2 is detected throughout the whole substrate (similar to400 mum) and a considerable quantity remains after annealing at 1500 degreesC for 15 minutes.
Ämnesord
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Nyckelord
- CVD; deuterium; hydrogen; SIMS
Publikations- och innehållstyp
- ref (ämneskategori)
- kon (ämneskategori)