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Diffusion of phosph...
Diffusion of phosphorus in strained Si/SiGe/Si heterostructures
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Kuznetsov, A.Yu. (författare)
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Christensen, J. S. (författare)
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- Linnarsson, M. K. (författare)
- KTH,Skolan för informations- och kommunikationsteknik (ICT)
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Svensson, B. G. (författare)
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Radamson, H. H. (författare)
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Grahn, J. (författare)
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Landgren, G. (författare)
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(creator_code:org_t)
- San Francisco, CA, USA, 1999
- 1999
- Engelska.
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Ingår i: Materials Research Society Symposium - Proceedings. - San Francisco, CA, USA. ; 568:Warrendale, PA, United States, s. 271-276
- Relaterad länk:
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http://www.scopus.co...
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Abstract
Ämnesord
Stäng
- Phosphorus diffusion in a biaxially compressed Si0.87Ge0.13 film has been investigated in the temperature range of 810-900 °C. A significant enhancement of the P diffusion in the biaxially compressed Si0.87Ge0.13 in comparison with P diffusion in Si is observed. Injection of Si self-interstitials (I) during oxidation of a Si-cap in Si/Si0.87Ge0.13/Si heterostructures is used to characterize the atomic mechanism of P diffusion in Si0.87Ge0.13. It is found that the upper limit of the interstitial fraction of the P diffusion in Si0.87Ge0.13 is 0.87 of that in Si. A comparison between B and P diffusivities in SiGe supports the hypothesis of the pairing-controlled mechanism for the diffusion of B in SiGe.
Ämnesord
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Nyckelord
- Diffusion in solids
- Oxidation
- Phosphorus
- Semiconducting boron
- Semiconducting films
- Semiconducting silicon
- Semiconducting silicon compounds
- Interstitial fraction
- Pairing-controlled mechanisms
- Heterojunctions
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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