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Single mode 1.3 ÎŒm...
Single mode 1.3 ÎŒm InGaAs VCSELs for access network applications
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- Westbergh, Petter, 1981 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Söderberg, Emma, 1980 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Gustavsson, Johan, 1974 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Modh, Peter, 1968 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Larsson, Anders, 1957 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Zhang, Zhenzhong (författare)
- KTH,Mikroelektronik och tillämpad fysik, MAP
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- Berggren, Jesper (författare)
- KTH,Mikroelektronik och tillämpad fysik, MAP
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- Hammar, Mattias (författare)
- KTH,Mikroelektronik och tillämpad fysik, MAP
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(creator_code:org_t)
- SPIE, 2008
- 2008
- Engelska.
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Ingår i: Semiconductor Lasers and Laser Dynamics III. - : SPIE. ; 6997, s. 69970Y-1-8-
- Relaterad länk:
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http://www.scopus.co...
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https://urn.kb.se/re...
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https://doi.org/10.1...
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https://research.cha...
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Abstract
Ämnesord
Stäng
- GaAs-based VCSELs emitting near 1.3 Όm are realized using highly strained InGaAs quantum wells and a large detuning of the cavity resonance with respect to the gain peak. The VCSELs have an oxide aperture for current and optical confinement and an inverted surface relief for suppression of higher-order transverse modes. The inverted surface relief structure also has the advantage of suppressing oxide modes that otherwise appear in VCSELs with a large detuning between the cavity resonance and the gain peak. Under large signal, digital modulation, clear and open eyes and error free transmission over 9 km of single mode fiber have been demonstrated at the OC-48 and 10 GbE bit rates up to 85°C. Here we review these results and present results from a complementary study of the RF modulation characteristics, including second order harmonic and third order intermodulation distortion, relative intensity noise (RIN), and spurious free dynamic range (SFDR). RIN levels comparable to those of single mode VCSELs emitting at 850 nm are demonstrated, with values from -140 to -150 dB/Hz. SFDR values of 100 and 95 dB·Hz2/3 were obtained at 2 and 5 GHz, respectively, which is in the range of those required in radio-over-fiber systems.
Ämnesord
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Telekommunikation (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Telecommunications (hsv//eng)
Nyckelord
- Distortion
- Dynamic range
- High speed
- InGaAs
- VCSEL
- Cavity resonators
- Dynamics
- Electric conductivity
- Electric currents
- Fiber optics
- Heterojunctions
- Intermodulation distortion
- Lasers
- Modulation
- Quantum well lasers
- Resonance
- Semiconducting indium
- Semiconductor materials
- Single mode fibers
- Surface emitting lasers
- Surface structure
- Access network
- Bit rates
- Cavity resonances
- Detuning
- Digital modulations
- Error-free transmission
- Gain peaks
- Higher-order
- Highly strained
- Large signals
- Laser dynamics
- Optical confinement
- Oxide-aperture
- Quantum wells
- Relative intensity noise
- Rf modulation
- Second orders
- Single modes
- Spurious-free dynamic range
- Surface reliefs
- Third-order intermodulation distortion
- Transverse modes
- Semiconductor lasers
Publikations- och innehållstyp
- ref (ämneskategori)
- kon (ämneskategori)
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Till lärosätets databas
- Av författaren/redakt...
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Westbergh, Pette ...
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Söderberg, Emma, ...
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Gustavsson, Joha ...
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Modh, Peter, 196 ...
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Larsson, Anders, ...
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Zhang, Zhenzhong
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visa fler...
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Berggren, Jesper
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Hammar, Mattias
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visa färre...
- Om ämnet
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- NATURVETENSKAP
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NATURVETENSKAP
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och Fysik
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och Den kondenserade ...
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- TEKNIK OCH TEKNOLOGIER
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TEKNIK OCH TEKNO ...
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och Elektroteknik oc ...
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och Telekommunikatio ...
- Artiklar i publikationen
- Semiconductor La ...
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Proceedings of t ...
- Av lärosätet
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Kungliga Tekniska Högskolan
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Chalmers tekniska högskola