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InP-based 1.55ÎŒm R...
Abstract
Ämnesord
Stäng
- We report on the fabrication and characterisation of a resonant cavity light-emitting diode (RCLED) operating at 1.55 ÎŒm. As compared to conventional LEDs such devices merit from a higher emission intensity with a more narrow linewidth and are therefore promising as light sources in fibre optical communication systems. The present design is based on an InGaAsP multi-quantum well structure and utilises two InGaAsP/InP epitaxial distributed Bragg reflectors (DBRs), one 50 periods high reflectivity bottom mirror and a top out-coupling mirror with lower reflectivity. This gives the advantage of top-emission combined with the possibility of achieving very narrow linewidth. The process is fully monolithic and full wafer scale compatible.
Ämnesord
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Nyckelord
- Cavity resonators
- Epitaxial growth
- Light reflection
- Mirrors
- Semiconducting indium gallium arsenide
- Semiconducting indium phosphide
- Semiconductor quantum wells
- Resonant cavity light emitting diodes
- Light emitting diodes
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