All-epitaxial single-fused 1.55 ÎŒm vertical cavity laser based on an InP bragg reflector

• We have realised an all-epitaxial 1.55 ÎŒm vertical cavity laser by employing a single wafer-fusion step. The laser structure is fabricated by fusing a 32-period p-doped (C) AlGaAs/GaAs top mirror onto a half-cavity structure consisting of a 50-period n-doped (Si) GaInAsP/InP bottom mirror and a 9 quantum well GaInAsP-active material. Laser mesas are fabricated using a wet etching procedure for the top mirror. The top mirror also contains an AlAs layer for oxidation for current confinement. The lasers operate pulsed at temperatures up to 40°C and at pulse lengths of 10 ÎŒs up to 5°C. The minimum threshold current density at room temperature is 1.8 kA/cm2 for a device diameter of 55 ÎŒm. Compared to nonoxidised laser diodes, the threshold current is markedly decreased in oxidised laser diodes. © 1999 Publication Board, Japanese Journal of Applied Physics.

Ämnesord

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Nyckelord

Distributed bragg reflectors

Long-wavelength lasers

Vertical-cavity lasers

Wafer fusion

Etching

Laser pulses

Photocurrents

Semiconducting gallium arsenide

Semiconducting indium phosphide

Semiconductor device structures

Semiconductor quantum wells

Distributed Bragg reflector

Vertical cavity laser

Semiconductor lasers

Publikations- och innehållstyp

ref (ämneskategori)

art (ämneskategori)