Structure of the wafer fused InP (001)-GaAs (001) interface

• A structural study of wafer fused InP-GaAs interfaces has been carried out. The geometry of the dislocation network which accommodates the twist and the lattice mismatch is first given using a geometrical approach. Cross-sectional transmission electron microscopy and plan view observations are presented. Two different misfit cases are observed. (1) When no twist is present, the 3.7% lattice mismatch is relaxed by a regular square network of dislocations with pure edge character. (2) When an additional twist is present, a square network of dislocations results as well but here the dislocations have a mixed character; 60° dislocations are also observed, some form closed defect circuits and others very likely accommodate a small tilt. The interaction between the 60° dislocations and the edge dislocations is explained in detail. Voids or inclusions are also observed as well as additional dislocations which may accommodate part of the thermal mismatch. © 1997 Taylor & Francis Ltd.

Ämnesord

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Nyckelord

Crystal lattices

Crystal orientation

Dislocations (crystals)

Semiconducting gallium arsenide

Semiconducting indium phosphide

Semiconductor device structures

Transmission electron microscopy

Lattice mismatch

Thermal mismatch

Semiconductor junctions

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